general features v ds =60v,i d =75a r ds(on) < 11.5m ? @ v gs =10v (typ:9.1m ? ) high density cell design for ultra low rdson fully characterized avalanche voltage and current good stability and uniformity with high e as excellent package for good heat dissipation special process technology for high esd capability application power switching application hard switched and high frequency circuits uninterruptible power supply schematic diagram marking and pin assignment to-220-3l top view package marking and ordering information device marking device device package reel size tape width quantity to-220-3l - - - absolute maximum ratings (t c =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v drain current-continuous i d 75 a drain current-continuous(t c =100 ) i d (100 ) 50 a pulsed drain current i dm 300 a maximum power dissipation p d 110 w derating factor 0.73 w/ single pulse avalanche energy (note 5) e as 450 mj operating junction and st orage temperature range t j ,t stg -55 to 175 msn0675k msn0675k 60v(d-s) n-channel enhancement mode power mos fet msn0675k lead free pin configuration more semiconductor company limited http://www.moresemi.com 1/6
thermal characteristic thermal resistance,junction-to-case (note 2) r jc 1.36 /w electrical characteristics (t c =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250 a 60 68 - v zero gate voltage drain current i dss v ds =60v,v gs =0v - - 1 a gate-body leakage current i gss v gs =20v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 2 3 4 v drain-source on-state resistance r ds(on) v gs =10v, i d =30a - 9.1 11.5 m ? forward transconductance g fs v ds =25v,i d =30a 20 - - s dynamic characteristics (note4) input capacitance c lss - 2350 - pf output capacitance c oss - 237 - pf reverse transfer capacitance c rss v ds =25v,v gs =0v, f=1.0mhz - 205 - pf switching characteristics (note 4) turn-on delay time t d(on) - 16 - ns turn-on rise time t r - 10 - ns turn-off delay time t d(off) - 45 - ns turn-off fall time t f v dd =30v,i d =2a,r l =15 ? v gs =10v,r g =2.5 ? - 12 - ns total gate charge q g - 50 - nc gate-source charge q gs - 12 - nc gate-drain charge q gd v ds =30v,i d =30a, v gs =10v - 16 - nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =30a - - 1.2 v diode forward current (note 2) i s - - 75 a reverse recovery time t rr - 28 ns reverse recovery charge qrr tj = 25c, if =75a di/dt = 100a/ s (note3) - 49 nc forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production 5. e as condition: tj=25 ,v dd =30v,v g =10v,l=0.5mh,rg=25 ? more semiconductor company limited http://www.moresemi.com 2/6 msn0675k
test circuit 1) e as test circuits 2) gate charge test circuit 3) switch time test circuit more semiconductor company limited http://www.moresemi.com 3/6 msn0675k
typical electrical and the rmal characteristics (curves) vds drain-source voltage (v) figure 1 output characteristics vgs gate-source voltage (v) figure 2 transfer characteristics i d - drain current (a) figure 3 rdson- drain current t j -junction temperature( ) figure 4 rdson-junctiontemperature qg gate charge (nc) figure 5 gate charge vsd source-drain voltage (v) figure 6 source- drain diode forward rdson on-resistance(m ) i d - drain current (a) i d - drain current (a) normalized on-resistance vgs gate-source voltage (v) i s - reverse drain current (a) more semiconductor company limited http://www.moresemi.com 4/6 msn0675k
vds drain-source voltage (v) figure 7 capacitance vs vds vds drain-source voltage (v) figure 8 safe operation area t j -junction temperature( ) figure 9 bv dss vs junction temperature t j -junction temperature( ) figure 10 v gs(th) vs junction temperature i d - drain current (a) c capacitance (pf) square wave pluse duration(sec) figure 11 normalized maximum transient thermal impedance r(t),normalized effective transient thermal im p edance more semiconductor company limited http://www.moresemi.com 5/6 msn0675k
to-220-3l package information dimensions in millimeters dimensions in inches symbol min. max. min. max. a 4.400 4.600 0.173 0.181 a1 2.250 2.550 0.089 0.100 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.330 0.650 0.013 0.026 c1 1.200 1.400 0.047 0.055 d 9.910 10.250 0.390 0.404 e 8.9500 9.750 0.352 0.384 e1 12.650 12.950 0.498 0.510 e 2.540 typ. 0.100 typ. e1 4.980 5.180 0.196 0.204 f 2.650 2.950 0.104 0.116 h 7.900 8.100 0.311 0.319 h 0.000 0.300 0.000 0.012 l 12.900 13.400 0.508 0.528 l1 2.850 3.250 0.112 0.128 v 7.500 ref. 0.295 ref. 3.400 3.800 0.134 0.150 more semiconductor company limited http://www.moresemi.com 6/6 msn0675k
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